High temperature operation of silicon carbide Schottky diodes with recoverable avalanche breakdown

Vassilevski, K; Nikitina, I; Bhatnagar, P; Horsfall, A; Wright, N; O'Neill, AG; Uren, M; Hilton, K; Munday, A; Hydes, A; Johnson, CM

doi:10.4028/www.scientific.net/MSF.527-529.931

High temperature operation of silicon carbide Schottky diodes with recoverable avalanche breakdown

Lookup NU author(s): Dr Konstantin Vasilevskiy ORCiD, Irina Nikitina, Dr Alton Horsfall, Professor Nick Wright, Professor Anthony O'Neill, Dr Christopher Johnson

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Abstract

4H-SiC diodes with nickel suicide (Ni2Si) and molybdenum (Mo) Schottky contacts have been fabricated and characterised at temperature up to 400°C. Room temperature boron implantation has been used to form a single zone junction termination extension. Both Ni2Si and Mo diodes revealed unchanging ideality factors and barrier heights (1.45 and 1.3 eV, respectively) at temperatures up to 400°C Soft recoverable breakdowns were observed both in Ni2Si and Mo Schottky diodes at voltages above 1450 V and 3400 V depending on the epitaxial structure used. These values are about 76% and 94% of the ideal avalanche breakdown voltages. The Ni2Si diodes revealed positive temperature coefficients of breakdown voltage at temperature up to 240°C.