Lookup NU author(s): Praneet Bhatnagar,
Dr Alton Horsfall,
Professor Nick Wright,
Dr Christopher Johnson,
Dr Konstantin Vasilevskiy,
Professor Anthony O'Neill
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Physics-based analytical models are seen as an efficient way of predicting the characteristics of power devices since they can achieve high computational efficiency and may be easily calibrated using parameters obtained from experimental data. This paper presents an analytical model for a 4H-SiC Enhancement Mode Vertical JFET (VJFET), based on the physics of this device. The on-state and blocking behaviour of VJFETs with finger widths ranging from 1.6μm to 2.2μm are studied and compared with the results of finite element simulations. It is shown that the analytical model is capable of accurately predicting both the on-state and blocking characteristics from a single set of parameters, underlining its utility as a device design and circuit analysis tool.
Author(s): Bhatnagar P, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: International Conference on Silicon Carbide and Related Materials (ICSCRM 2005)
Year of Conference: 2006
Publisher: Materials Science Forum: Trans Tech Publications Ltd
Notes: ISBN: 9780878494255
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