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Analytical modelling of I-V characteristics for 4H-SiC enhancement mode VJFET

Lookup NU author(s): Praneet Bhatnagar, Dr Alton Horsfall, Professor Nick Wright, Dr Christopher Johnson, Dr Konstantin Vasilevskiy, Professor Anthony O'Neill

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Abstract

Physics-based analytical models are seen as an efficient way of predicting the characteristics of power devices since they can achieve high computational efficiency and may be easily calibrated using parameters obtained from experimental data. This paper presents an analytical model for a 4H-SiC Enhancement Mode Vertical JFET (VJFET), based on the physics of this device. The on-state and blocking behaviour of VJFETs with finger widths ranging from 1.6μm to 2.2μm are studied and compared with the results of finite element simulations. It is shown that the analytical model is capable of accurately predicting both the on-state and blocking characteristics from a single set of parameters, underlining its utility as a device design and circuit analysis tool.


Publication metadata

Author(s): Bhatnagar P, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: International Conference on Silicon Carbide and Related Materials (ICSCRM 2005)

Year of Conference: 2006

Pages: 1195-1198

ISSN: 0255-5476

Publisher: Materials Science Forum: Trans Tech Publications Ltd

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.527-529.1195

DOI: 10.4028/www.scientific.net/MSF.527-529.1195

Notes: ISBN: 9780878494255

Library holdings: Search Newcastle University Library for this item

ISBN: 9780878494255


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