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Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs

Lookup NU author(s): Goutan Dalapati, Dr Sanatan Chattopadhyay, Dr Kelvin Kwa, Dr Sarah Olsen, Dr Yuk Tsang, Rimoon Agaiby, Professor Anthony O'Neill, Dr Piotr Dobrosz, Professor Steve Bull

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Abstract

Surface channel strained-silicon MOSFETs on relaxed Si1-x Gex virtual substrates (VSs) have been established as an attractive avenue for extending Si CMOS performance as dictated by Moore's law. The performance of a surface channel Si n-MOSFET is significantly influenced by strained Si/SiO2 interface quality. The effects of Ge content (20, 25, and 30%) in the VS and strained-Si thickness (6, 5.5, 4.7, and 3.7 nm) on the strained Si/SiO2 interface have been investigated. The interface trap density was found to be proportional to the Ge content in the VS. Fixed oxide charge density reduces to a lower limit at higher strained-Si thickness for any Ge content in the VS, and the value increases as the strained-Si thickness is reduced. There is a high concentration of interface trap charge and fixed oxide charge present for devices with a strained-Si channel thickness below 4.7 nm. To investigate the effect of strained Si/SiO2 interface quality on MOSFET devices fabricated using a hightemperature CMOS process, the performance of surface channel n-MOSFETs has been correlated with channel thickness. It is noted that the drain-current rapidly decreases at low gate voltages for channel thicknesses less than 4.7 nm. The performance of both MOS capacitors and MOSFETs degraded below a strained-Si thickness of 4.7 nm irrespective of the Ge content in the VS even up to 30%. TCAD simulations have been carried out to analyze the effect of strained Si/SiO2 interface on electrical characteristics. Performance degradation in thin strained-Si channels is primarily attributed to gate oxide quality. The out-diffused Ge accumulates at the strained Si/SiO2 interface, introducing a significant amount of interface traps and fixed oxide charges during thermal oxidation. Interface trap density and fixed oxide charge density significantly increased when the Ge concentration at the surface becomes more than 6%. This paper suggests that a minimum strained-Si layer thickness of ∼ 5.0 nm is required to achieve a good strained Si/SiO2 interface quality for surface channel strained-Si n-MOSFETs, fabricated using a high thermal budget CMOS process. © 2006 IEEE.


Publication metadata

Author(s): Dalapati GK, Chattopadhyay S, Kwa KSK, Olsen SH, Tsang YL, Agaiby R, O'Neill AG, Dobrosz P, Bull SJ

Publication type: Article

Publication status: Published

Journal: IEEE Transactions on Electron Devices

Year: 2006

Volume: 53

Issue: 5

Pages: 1142-1152

ISSN (print): 0018-9383

ISSN (electronic): 1557-9646

Publisher: IEEE

URL: http://dx.doi.org/10.1109/TED.2006.872086

DOI: 10.1109/TED.2006.872086


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