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Microwave p-i-n diodes and switches based on 4H-SiC

Lookup NU author(s): Dr Konstantin VasilevskiyORCiD

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Abstract

The 4H-SiC p-i-n diodes were designed, fabricated, and characterized for use in microwave applications. The diodes with mesa structure diameters betw een 80 and 150 μm, exhibited a blocking voltage of 1100 V, a 100-mA differential resistance of 1-2 Ω, a capacitance below 0.5 pF at a punchthrough voltage of 100 V and a carrier effective lifetime between 15 ns. X-band microwave switches based on 4H-SiC p-i-n diodes are demonstrated for the first time. The switches exhibited insertion loss as low as 0.7 dB, isolation up to 25 dB and were able to handle microwave power up to 2.2 kW in isolation mode and up to 0.4 kW in insertion mode. © 2006 IEEE.

Publication metadata

Author(s): Camara N, Zekentes K, Romanov LP, Kirillov AV, Boltovets MS, Vassilevski KV, Haddad G

Publication type: Article

Publication status: Published

Journal: IEEE Electron Device Letters

Year: 2006

Volume: 27

Issue: 2

Pages: 108-110

Date deposited: 09/07/2010

ISSN (print): 0741-3106

ISSN (electronic):

Publisher: IEEE

URL: http://dx.doi.org/10.1109/LED.2005.862686

DOI: 10.1109/LED.2005.862686

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