Lookup NU author(s): Goutan Dalapati,
Dr Sanatan Chattopadhyay,
Dr Yuriy Butenko,
Professor Lidija Siller
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Rapid thermal oxidation (RTO) of the Ge-rich (x=0.7) Si1-x Gex heterolayer is reported. In particular, the structural modifications of SiGe films during oxidation process and the dependence of the oxidation kinetics on Ge content, oxidation temperature, and oxide thickness have been studied. The segregation mechanism of Ge at the oxideSiGe interface is discussed. Interface properties of the RTO-grown oxides studied using high-frequency capacitance-voltage (C-V) characteristics of metal-oxide-semiconductor capacitors are also reported.
Author(s): Bera MK, Chakraborty S, Das R, Dalapati GK, Chattopadhyay S, Samanta SK, Yoo WJ, Chakraborty AK, Butenko Y, Siller L, Hunt MRC, Saha S, Maiti CK
Publication type: Article
Publication status: Published
Journal: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
ISSN (print): 0734-2101
ISSN (electronic): 1071-8028
Publisher: American Institute of Physics
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