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Calculation of deep carrier traps in a divacancy in germanium crystals

Lookup NU author(s): Professor Patrick Briddon

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Abstract

We present an ab initio density functional study on the electronic structure and electrical properties of divacancies in Ge. Although suffering essentially different Jahn-Teller distortions when compared to the analogous defect in Si, the relative location of the electrical levels in the gap does not differ radically in both materials. We propose a V2 model that is responsible for a donor level at Ev +0.03 eV, a first acceptor state at Ev +0.3 eV, and a second acceptor level at Ec -0.4 eV. The latter is only 0.1 eV deeper than an electron trap that has been recently linked to a divacancy in proton implanted material. © 2006 American Institute of Physics.


Publication metadata

Author(s): Coutinho J, Torres VJB, Jones R, Carvalho A, Oberg S, Briddon PR

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2006

Volume: 88

Issue: 9

ISSN (print): 0003-6951

ISSN (electronic): 1520-8842

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.2181202

DOI: 10.1063/1.2181202

Notes: Article no. 091919 3 pages


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