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Early stage donor-vacancy clusters in germanium

Lookup NU author(s): Professor Patrick Briddon

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Abstract

There is considerable experimental evidence that vacancies in Ge dominate several solid state reactions that range from self-diffusivity to metal and dopant transport. It is therefore vital that we fully understand how vacancies interact with other point defects in Ge. Here we have a look at the properties of small donor-vacancy (Sbn Vm with m,n ≤ 2) complexes in Ge by ab-initio density functional modeling. Particular attention has been payed to binding energies and to the electronic activity of the complexes. We found that all aggregates may contribute to the n → p type conversion that is typically observed under prolonged MeV irradiation conditions. In general, SbnVm defects are double acceptors. It is also suggested that spontaneous formation of Sb3V complexes may limit the activation level of donors introduced by ion implantation. © Springer Science+Business Media, LLC 2006.


Publication metadata

Author(s): Coutinho J, Torres VJB, Oberg S, Carvalho A, Janke C, Jones R, Briddon PR

Publication type: Article

Publication status: Published

Journal: Journal of Materials Science: Materials in Electronics

Year: 2007

Volume: 18

Issue: 7

Pages: 769-773

ISSN (print): 0957-4522

ISSN (electronic): 1573-482X

Publisher: Springer New York LLC

URL: http://dx.doi.org/10.1007/s10854-006-9069-4

DOI: 10.1007/s10854-006-9069-4


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