Browse by author
Lookup NU author(s): Professor Patrick Briddon
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
There is considerable experimental evidence that vacancies in Ge dominate several solid state reactions that range from self-diffusivity to metal and dopant transport. It is therefore vital that we fully understand how vacancies interact with other point defects in Ge. Here we have a look at the properties of small donor-vacancy (Sbn Vm with m,n ≤ 2) complexes in Ge by ab-initio density functional modeling. Particular attention has been payed to binding energies and to the electronic activity of the complexes. We found that all aggregates may contribute to the n → p type conversion that is typically observed under prolonged MeV irradiation conditions. In general, SbnVm defects are double acceptors. It is also suggested that spontaneous formation of Sb3V complexes may limit the activation level of donors introduced by ion implantation. © Springer Science+Business Media, LLC 2006.
Author(s): Coutinho J, Torres VJB, Oberg S, Carvalho A, Janke C, Jones R, Briddon PR
Publication type: Article
Publication status: Published
Journal: Journal of Materials Science: Materials in Electronics
Year: 2007
Volume: 18
Issue: 7
Pages: 769-773
ISSN (print): 0957-4522
ISSN (electronic): 1573-482X
Publisher: Springer New York LLC
URL: http://dx.doi.org/10.1007/s10854-006-9069-4
DOI: 10.1007/s10854-006-9069-4
Altmetrics provided by Altmetric
