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Mechanical properties of a 3C-SiC film between room temperature and 600 °c

Lookup NU author(s): Dr Michele Pozzi, Mr MA Hussan Hassan, Dr Alun Harris, Emeritus Professor James Burdess, Dr Gordon Phelps, Professor Nick Wright

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Abstract

Silicon carbide (SiC) is widely recognized as the leading candidate to replace silicon in micro-electro-mechanical systems devices operating in harsh environments. In this work, cantilevers and bridges in SiC are designed, fabricated and evaluated between room temperature (RT) and 600 °C. The active material is a cubic poly-SiC film deposited on a poly-Si layer which is separated from the Si substrate by a thermal oxide. From surface profiling and optical observations, it is deduced that an average residual strain of +5 × 10-4 is present in the 2.7 νm thick film, with a gradient of 2.5 × 10-4 νm-1. The structures are excited either mechanically or electrostatically. Their resonance frequency is measured by laser Doppler velocimetry and used to derive the Young's modulus and residual stress in the heteroepitaxial layer (330 45 GPa and 200 20 MPa, respectively). The temperature coefficient of Young's modulus is found to be -53 2 ppm K -1 in the range RT to ∼ 300 °C, while an analytical expression is given for the temperature dependence of the Young's modulus between RT and 500 °C. The residual tensile stress is found to depend on temperature in a complex manner. © 2007 IOP Publishing Ltd.


Publication metadata

Author(s): Pozzi M, Hassan M, Harris AJ, Burdess JS, Jiang L, Lee KK, Cheung R, Phelps GJ, Wright NG, Zorman CA, Mehregany M

Publication type: Article

Publication status: Published

Journal: Journal of Physics D: Applied Physics

Year: 2007

Volume: 40

Issue: 11

Pages: 3335-3342

ISSN (print): 0022-3727

ISSN (electronic): 1361-6463

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0022-3727/40/11/012

DOI: 10.1088/0022-3727/40/11/012


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