Lookup NU author(s): Professor Anthony O'Neill,
Dr Sarah Olsen,
Dr Enrique Escobedo-Cousin,
Dr Sanatan Chattopadhyay,
Dr Piotr Dobrosz,
Professor Steve Bull
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Following a brief review of strained silicon technology options, this paper presents results and analysis of strained Si n-channel MOSFETs fabricated on thin SiGe virtual substrates. Significant improvements in electrical performance are demonstrated compared with Si control devices. The impact of SiGe device self-heating is compared for strained Si MOSFETs fabricated on thin and thick virtual substrates. The work demonstrates that by using high quality thin virtual substrates the compromised performance enhancements commonly observed in short gate length MOSFETs and high bias conditions due to self-heating in conventional thick virtual substrate devices are eradicated. © 2006 IEEE.
Author(s): O'Neill AG, Olsen SH, Escobedo-Cousin E, Varzgar JB, Agaiby R, Chattopadhyay S, Dobrosz P, Bull S, Hellstrom P-E, Ostling M, Lyutovich K, Kasper E
Editor(s): Ting-Ao Tang; Guo-Ping Ru; Yu-Long Jiang
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Year of Conference: 2006
Publisher: IEEE Press
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