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Simulation study of high-k materials for SiC trench MOSFETs

Lookup NU author(s): Peter Tappin, Dr Rajat Mahapatra, Professor Nick Wright, Praneet Bhatnagar, Dr Alton Horsfall

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Abstract

This report investigates the advantages of high-k materials as gate dielectrics for high power SiC trench MOSFET devices, by means of TCAD simulation. The study makes a comparison between the breakdown characteristics of gate dielectrics comprising SiO2, HfO2 and TiO 2. I-V and Transfer functions show forward characteristics with on-state resistivity of 8.27 mΩ·cm2, 8.65 mΩ·cm2,15.8 mΩ·cm2 for the respective devices, at a gate voltage of 20 V. The threshold voltage is 10 V for all devices. The blocking voltage for the HfO2 and TiO2 is increased from 1800 V (for the SiO2 device) to 2200 V. With a peak electric field of 12 MV/cm through the oxide of the SiO2 device is reduced to 3.2 MV/cm for the HfO2 and 2.3 MV/cm for the TiO 2 devices.


Publication metadata

Author(s): Tappin P, Mahapatra R, Wright NG, Bhatnagar P, Horsfall AB

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 6th European Conference on Silicon Carbide and Related Materials (ECSCRM 2006)

Year of Conference: 2007

Pages: 839-842

ISSN: 0255-5476

Publisher: Materials Science Forum: Trans Tech Publications Ltd

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.556-557.839

DOI: 10.4028/www.scientific.net/MSF.556-557.839

Library holdings: Search Newcastle University Library for this item

ISBN: 14226375


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