Lookup NU author(s): Dr Piotr Dobrosz,
Dr Sarah Olsen,
Professor Anthony O'Neill
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In this paper we investigate the mobility enhancement due to strain in bended NW MOSFETs. Stress of 200 MPa to 2GPa, induced by thermal oxidation, is measured in suspended NW FETs by Raman spectroscopy. Mobility enhancement of more than 100% is observed. Performance gain of bended compared to non-bended structures is most pronounced in low field conditions and at low temperatures. © 2007 IEEE.
Author(s): Moselund KE, Dobrosz P, Olsen S, Pott V, De Michielis L, Tsamados D, Bouvet D, O'Neill A, Ionescu AM
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: International Electron Devices Meeting (IEDM)
Year of Conference: 2007
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