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Nitrogen related shallow thermal donors in silicon

Lookup NU author(s): Professor Patrick Briddon

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Abstract

In this letter, the authors investigate the electrical properties of nitrogen related shallow thermal donor (STD) candidates and their concentrations under different doping conditions by means of density functional theory. Experimentally, the existence of STDs containing one nitrogen atom and both even and odd numbers of oxygen atoms has been proposed. However, so far first principles studies have not presented a candidate for the latter. Here, they show that the NO defect possesses a shallow donor level. Adding one or two more oxygen atoms results in the donor level to become shallower. The fraction of shallow nitrogen related donors to N dimers increases in material with low concentration of nitrogen. © 2007 American Institute of Physics.


Publication metadata

Author(s): Fujita N, Jones R, Oberg S, Briddon PR

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2007

Volume: 91

Issue: 5

Pages: -

Print publication date: 01/01/2007

ISSN (print): 0003-6951

ISSN (electronic): 1520-8842

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.2767989

DOI: 10.1063/1.2767989


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