Lookup NU author(s): Dr Christopher Johnson,
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In this paper a novel approach to the design and fabrication of a high temperature inverter module for hybrid electrical vehicles is presented. Firstly, SiC power electronic devices are considered in place of the conventional Si devices. Use of SiC raises the maximum practical operating junction temperature to well over 200°C, giving much greater thermal headroom between the chips and the coolant. In the first fabrication, a SiC Schottky barrier diode (SBD) replaces the Si pin diode and is paired with a Si-IGBT. Secondly, double-sided cooling is employed, in which the semiconductor chips are sandwiched between two substrate tiles. The tiles provide electrical connections to the top and the bottom of the chips, thus replacing the conventional wire bonded interconnect. Each tile assembly supports two IGBTs and two SBDs in a half-bridge configuration. Both sides of the assembly are cooled directly using a high-performance liquid impingement system. Specific features of the design ensure that thermo-mechanical stresses are controlled so as to achieve long thermal cycling life. A prototype 10 kW inverter module is described incorporating three half-bridge sandwich assemblies, gate drives, dc-link capacitance and two heat-exchangers. This achieves a volumetric power density of 30W/cm3.
Author(s): Buttay C, Johnson CM, Rashid J, Udrea F, Amaratunga GAJ, Tappin P, Wright N, Ireland P, Yamamoto T, Takeuchi Y, Malhan RK
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 6th European Conference on Silicon Carbide and Related Materials (ECSCRM)
Year of Conference: 2007
Publisher: Materials Science Forum: Trans Tech Publications Ltd
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