Lookup NU author(s): Professor Patrick Briddon
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
Recent high resolution photoluminescence studies of high quality Mg doped GaN show the presence of two acceptors. One is due to Mg and the other labeled A1 has a shallower acceptor defect. The authors investigate likely candidates for this shallow acceptor and conclude that CN is the most likely possibility. The authors also show that the CN is passivated by H and the passivated complex is more stable than MgGa -H. © 2007 American Institute of Physics.
Author(s): Eberlein TAG, Jones R, Oberg S, Briddon PR
Publication type: Article
Publication status: Published
Journal: Applied Physics Letters
Print publication date: 01/01/2007
ISSN (print): 0003-6951
ISSN (electronic): 1520-8842
Publisher: American Institute of Physics
Altmetrics provided by Altmetric