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Effects of interface engineering for HfO2 gate dielectric stack on 4H-SiC

Lookup NU author(s): Dr Rajat Mahapatra, Dr Alton Horsfall, Dr Sanatan Chattopadhyay, Professor Nick Wright

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Abstract

Hf O2 films were grown on Si O2 4H-SiC and SiON4H-SiC layers by deposition of metallic Hf in an electron beam evaporation system followed by thermal oxidation. X-ray photoelectron spectroscopy confirmed the formation of stoichiometric Hf O2 films. There is no evidence of formation of hafnium silicide or carbon pileup at the surface as well as at the interfacial layer. Electrical measurements show the presence of fewer trapped charges in the Hf O2 SiON gate dielectric stack compared to Hf O2 Si O2 stack with a comparable interface state density. The Hf O2 SiON stack layer improves leakage current characteristics with a higher breakdown field and has smaller flatband voltage shift under electrical stress, indicating improved reliability. © 2007 American Institute of Physics.


Publication metadata

Author(s): Mahapatra R, Chakraborty AK, Horsfall AB, Chattopadhyay S, Wright NG, Coleman KS

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2007

Volume: 102

Issue: 2

ISSN (print): 0021-8979

ISSN (electronic): 1089-7550

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.2756521

DOI: 10.1063/1.2756521


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