Toggle Main Menu Toggle Search

Open Access padlockePrints

Leakage current and charge trapping behavior in Ti O2 Si O2 high- κ gate dielectric stack on 4H-SiC substrate

Lookup NU author(s): Dr Rajat Mahapatra, Nipapan Poolamai, Dr Alton Horsfall, Dr Sanatan Chattopadhyay, Professor Nick Wright

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Abstract

The Ti O2 Si O2 gate dielectric stack on 4H-SiC substrate has been studied as a high- κ gate dielectric for metal-oxide semiconductor devices. X-ray photoelectron spectroscopy confirmed the formation of stoichiometric Ti O2 films. The leakage current through the stack layer was investigated and it has been shown to be a double conduction mechanism. At low fields, the current is governed by properties of the interfacial layer with a hopping like conduction mechanism, while at relatively high electric field, carriers are modulated by a trap assisted tunneling mechanism through traps located below the conduction band of Ti O2. The current-voltage characteristics, time evolution of charge transport, and capacitance-voltage behaviors under constant voltage stressing suggest the composite effect of electron trapping and positive charge generation in the dielectric stack layer. © 2007 American Vacuum Society.


Publication metadata

Author(s): Mahapatra R, Chakraborty AK, Poolamai N, Horsfall A, Chattopadhyay S, Wright NG, Coleman KS, Coleman PG, Burrows CP

Publication type: Article

Publication status: Published

Journal: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Year: 2007

Volume: 25

Issue: 1

Pages: 217-223

ISSN (print): 1071-1023

ISSN (electronic): 1520-8567

Publisher: American Institute of Physics

URL: http://dx.org/10.1116/1.2433976

DOI: 10.1116/1.2433976


Altmetrics

Altmetrics provided by Altmetric


Actions

Find at Newcastle University icon    Link to this publication


Share