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Lookup NU author(s): Professor Patrick Briddon
SiC p-i-n diodes exhibit an increase in the voltage drop under forward bias which has been linked with the increased mobility of partial dislocations. Through first-principles calculations, we investigated the Si(g) and C(g) core 90° partials in 4H-SiC. We showed that both dislocations can sustain the asymmetric and symmetric reconstructions along the dislocation line. The latter reconstructions are always electrically active with a half-filled metallic band and are always more likely to migrate with substantially lower activation energies. Further we have suggested that under forward bias, the 90° partials are less mobile than the 30° partial dislocations. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
Author(s): Savini G, Heggie MI, Oberg S, Briddon PR
Publication type: Article
Publication status: Published
Journal: New Journal of Physics
Print publication date: 17/01/2007
ISSN (electronic): 1367-2630
Publisher: Institute of Physics Publishing Ltd.
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