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Electrical activity and migration of 90° partial dislocations in SiC

Lookup NU author(s): Professor Patrick Briddon

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Abstract

SiC p-i-n diodes exhibit an increase in the voltage drop under forward bias which has been linked with the increased mobility of partial dislocations. Through first-principles calculations, we investigated the Si(g) and C(g) core 90° partials in 4H-SiC. We showed that both dislocations can sustain the asymmetric and symmetric reconstructions along the dislocation line. The latter reconstructions are always electrically active with a half-filled metallic band and are always more likely to migrate with substantially lower activation energies. Further we have suggested that under forward bias, the 90° partials are less mobile than the 30° partial dislocations. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.


Publication metadata

Author(s): Savini G, Heggie MI, Oberg S, Briddon PR

Publication type: Article

Publication status: Published

Journal: New Journal of Physics

Year: 2007

Volume: 9

Issue: 6

Pages: 1-13

Print publication date: 17/01/2007

ISSN (electronic): 1367-2630

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/1367-2630/9/1/006

DOI: 10.1088/1367-2630/9/1/006


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