Lookup NU author(s): Dr Alton Horsfall,
Professor Steve Bull,
Professor Anthony O'Neill
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As ULSI dimensions shrink, conventional Ta/TaN barriers will not meet the future demands for ULSI interconnects, i.e. thin conformal layer without overhangs. In this paper, we have compared the material properties of TaN/Ta barriers with Ta only and W based barriers by means of XRD, AFM, Stress and SEM imaging. We found that using a conformal CVD W based barriers has great potential for future ULSI interconnects. It grain size and tensile stress improve resistance to both electromigration and stress migration, extending conductor lifetime. © 2007 Elsevier B.V. All rights reserved.
Author(s): Wang K, Horsfall A, Cuthbertson A, Bull S, O'Neill A
Publication type: Article
Publication status: Published
Journal: Microelectronic Engineering
Print publication date: 01/11/2007
ISSN (print): 0167-9317
ISSN (electronic): 1873-5568
Publisher: Elsevier BV
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