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High temperature characterisation of 4H-SiC VJFET

Lookup NU author(s): Praneet Bhatnagar, Professor Nick Wright, Dr Alton Horsfall, Dr Konstantin Vasilevskiy, Dr Christopher Johnson

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Abstract

4H-SiC depletion mode (normally-on) VJFETs were fabricated and characterised at temperatures up to 377 °C. The device current density at drain voltage of 50 V drops down from 54 A/cm2 at room temperature to around 42 A/cm2 at 377 °C which is a 20 % reduction in drain current density. This drop in drain currents is much lower than previously reported values of a 30 % drop in JFETs at high temperatures. The average temperature coefficient of the threshold voltage was found to be -1.36 mV/°C which is smaller than for most Si FETs. We have found that these devices have shown good I-V characteristics upto 377 °C along with being able to retain its characteristics on being retested at room temperature.


Publication metadata

Author(s): Bhatnagar P, Wright NG, Horsfall AB, Vassilevski K, Johnson CM, Uren MJ, Hilton KP, Munday AG, Hydes AJ

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 6th European Conference on Silicon Carbide and Related Materials (ECSCRM 2006)

Year of Conference: 2007

Pages: 799-802

ISSN: 0255-5476

Publisher: Materials Science Forum: Trans Tech Publications Ltd

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.556-557.799

DOI: 10.4028/www.scientific.net/MSF.556-557.799

Notes: Silicon Carbide and Related Materials 2006 Conference.

Library holdings: Search Newcastle University Library for this item

ISBN: 14226375


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