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Insight into the aggravated lifetime reliability in advanced MOSFETs with strained-Si channels on SiGe strain-relaxed buffers due to self-heating

Lookup NU author(s): Professor Anthony O'Neill, Dr Sarah Olsen

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Author(s): Agaiby R, O'Neill AG, Olsen SH, Eneman G, Verheyen P, Loo R, Claeys C

Publication type: Article

Publication status: Published

Journal: IEEE Transactions on Electron Devices

Year: 2008

Volume: 55

Issue: 6

Pages: 1568-1573

Print publication date: 01/06/2008

ISSN (print): 0018-9383

ISSN (electronic): 1557-9646

Publisher: IEEE

URL: http://dx.doi.org/10.1109/TED.2008.921994

DOI: 10.1109/TED.2008.921994


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