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Limits to n-type doping in Ge: Formation of donor-vacancy complexes

Lookup NU author(s): Professor Patrick Briddon

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Abstract

Vacancies and interstitials in semiconductors play a fundamental role in both high temperature diffusion and low temperature radiation and implantation damage. In Ge, a serious contender material for high-speed electronics applications, vacancies have historically been believed to dominate most diffusion related phenomena such as self-diffusivity or impurity migration. This is to be contrasted with silicon, where self-interstitials also play decisive roles, despite the similarities in the chemical nature of both materials. We report on density functional calculations of the formation and properties of vacancy-donor complexes in germanium. We predict that most vacancy-donor aggregates are deep acceptors, and together with their high solubilities, we conclude that they strongly contribute for inhibiting donor activation levels in germanium.


Publication metadata

Author(s): Coutinho J, Janke C, Carvalho A, Oberg S, Torres VJB, Jones R, Briddon PR

Editor(s): Öchsner, A; Murch, GE

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Defect and Diffusion Forum: Diffusion in Solids and Liquids III

Year of Conference: 2008

Pages: 93-98

ISSN: 1012-0386

Publisher: Trans Tech Publications Ltd.

URL: http://www.ttp.net/3-908451-51-5.html

Series Editor(s): Fischer, DJ


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