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A theoretical study of copper contaminated dislocations in silicon

Lookup NU author(s): Professor Patrick Briddon

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Abstract

Recently, the interaction of copper with dislocations in p-type Si/SiGe/Si structures has been investigated experimentally and a new dislocation related DLTS-level at Ev + 0.32 eV was detected after intentional contamination with copper, To determine the origin of this newly detected level, in this work we present first density functional calculations of substitutional copper at 90° and 30° partial dislocations in silicon. Defect-dislocation binding energies are determined and electrical gap levels are calculated and compared with the experimental data. As a result, the observed level at Ev + 0.32 eV is tentatively assigned to the single acceptor level of substitutional copper at the dislocation.


Publication metadata

Author(s): Fujita N, Jones R, Oberg S, Briddon PR, Blumenau AT

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Diffusion and Defect Data Pt.B: Solid State Phenomena. 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST

Year of Conference: 2008

Pages: 259-264

ISSN: 1012-0394

Publisher: Materials Science and Engineering


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