Lookup NU author(s): Professor Patrick Briddon
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
In this paper we investigate the formation of interstitial nitrogen trimers N3 which have been suggested as a fast-diffusing species in silicon recently. Out-diffusion profiles of nitrogen show the involvement of at least two independent nitrogen related defects in the diffusion process depending on the nitrogen concentration at different depths of the sample. When the nitrogen concentration is small it is proposed that nitrogen trimers are formed in a two step process. We present the structural properties of such a defect using density functional theory and examine the energetics of the two proposed reactions leading to the formation of N3.
Author(s): Fujita N, Jones R, Eberlein TAG, Oberg S, Briddon PR
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Diffusion and Defect Data Pt.B: Solid State Phenomena. 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007
Year of Conference: 2008
Publisher: Materials Science and Engineering