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Lookup NU author(s): Professor Patrick Briddon
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The properties of point defects introduced by low temperature electron irradiation of germanium are investigated by first-principles modeling. Close Frenkel pairs, including the metastable fourfold coordinated defect, are modelled and their stability is discussed. It is found that damage evolution upon annealing below room temperature can be consistently explained with the formation of correlated interstitial-vacancy pairs if the charge-dependent properties of the vacancy and self-interstitial are taken into account. We propose that Frenkel pairs can trap up to two electrons and are responsible for conductivity loss in n-type Ge at low temperatures.
Author(s): Carvalho A, Jones R, Janke C, Oberg S, Briddon PR
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Diffusion and Defect Data Pt.B: Solid State Phenomena. 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST
Year of Conference: 2008
Publisher: Materials Science and Engineering