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Influence of the Ge concentration in the virtual substrate on the low frequency noise in strained-Si surface n-channel metal-oxide-semiconductor field-effect transistors

Lookup NU author(s): Dr Sarah Olsen

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Abstract

We report on low frequency noise and field-effect mobility in strained-Si surface n -channel metal-oxide-semiconductor field-effect transistors (MOSFETs) grown on relaxed virtual substrates with a Ge concentration varying between 0% and 30%. An increased Ge concentration results in higher intrinsic field-effect mobility, increasing from 380 cm2 V-1 s-1 for the unstrained channel to 865 cm2 V-1 s-1 for the strained-Si MOSFET on 30% relaxed SiGe virtual substrate. However, the higher mobility is traded off for increased substrate leakage currents and increased 1f (flicker) noise. It is suggested that flicker noise is due to traps in the oxide layer. The density of traps increases from 2× 1017 eV-1 cm-3 for 0% Ge to 2.3× 1018 eV-1 cm-3 for the 30% Ge virtual substrate. © 2008 American Institute of Physics.


Publication metadata

Author(s): Fobelets K, Rumyantsev SL, Shur MS, Olsen SH

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2008

Volume: 103

Issue: 4

Print publication date: 01/01/2008

ISSN (print): 0021-8979

ISSN (electronic): 1520-8850

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.2844553

DOI: 10.1063/1.2844553

Notes: Article no. 044501 4 pages


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