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Interaction of oxygen with threading dislocations in GaN

Lookup NU author(s): Professor Patrick Briddon

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Abstract

A review is given of the results of first principles calculations used to investigate the structures and electronic properties of screw and edge dislocations in GaN. The atoms at the core of the full core screw dislocation possess heavily strained bonds leading to deep gap states. Removing the first shell of Ga and N atoms gives a screw dislocation with a small open core consisting of {10 (1) over bar 0} type surfaces. Therefore open-core screw dislocations induce only shallow gap states. In the same way we found the core of the threading edge dislocation to be reconstructed without any deep states. The interaction of oxygen with the cores of open-core screw and edge dislocations is considered and it is found that the impurity has a strong tendency to be bound by Ga vacancies leading to three types of defect trapped in the strain field. We suggest that the most stable defect leads to a poisoning of growth centres on the walls of nanopipes.


Publication metadata

Author(s): Jones R, Elsner J, Haugk M, Gutierrez R, Frauenheim T, Heggie MI, Oberg S, Briddon PR

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: International Conference on Extended Defects in Semiconductors (EDS 98)

Year of Conference: 1999

Pages: 167-173

ISSN: 0031-8965

Publisher: John Wiley & Sons, Inc.

URL: http://dx.doi.org/10.1002/(SICI)1521-396X(199901)171:1<167::AID-PSSA167>3.0.CO;2-M

DOI: 10.1002/(SICI)1521-396X(199901)171:1<167::AID-PSSA167>3.0.CO;2-M

Library holdings: Search Newcastle University Library for this item

Series Title: Physica Status Solidi (A) Applied Research

ISBN:


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