Lookup NU author(s): Professor Patrick Briddon
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The electrical levels of various combinations of transition metal-H-n defects in Si are calculated using spin-polarised local density functional cluster theory with an empirical correction. The shifts of these levels with H can be understood through a displacement and splitting of the gap t(2) manifold of states due to the impurity. Passive defects are identified.
Author(s): Jones R, Resende A, Oberg S, Briddon PR
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Symposium A on Defects in Silicon - Hydrogen at the 1998 Spring Meeting of the European-Materials-Research-Society
Year of Conference: 1999
Library holdings: Search Newcastle University Library for this item
Series Title: Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Sponsor(s): European Mat Res Soc