Lookup NU author(s): Professor Patrick Briddon
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First-principles density functional calculations are used to investigate antisite pairs in 4H-SiC. We show that they are likely to be formed in close proximity under ionizing conditions, and they possess a donor level and thermal stability consistent with the series of 40 photoluminescent lines called the alphabet lines. Moreover, the gap vibrational mode of the silicon antisite defect is close to a phonon replica of the b(1) line and possesses a weak isotopic shift with C-13 in agreement with observation.
Author(s): Eberlein TAG, Fall CJ, Jones R, Briddon PR, Oberg S
Publication type: Article
Publication status: Published
Journal: Physical Review B
ISSN (print): 1098-0121
ISSN (electronic): 1550-235X
Publisher: American Physical Society
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