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Theoretical study of cubic polytype inclusions in 4H-SiC

Lookup NU author(s): Professor Patrick Briddon

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Abstract

First-principles density-functional calculations of the band structure and wave functions around narrow X-like inclusions in 4H-SiC have been performed. X-like inclusions of various thicknesses, corresponding to two, three, and four stacking faults in neighbouring basal planes, have been investigated. The results for the number of bound states in the inclusion, their energies, and wave functions are well described by a simple one-dimensional quantum-well square potential. The quantum-well property of these inclusions suggests that X-like regions in 4H-SiC are efficient planar traps for conduction band electrons.


Publication metadata

Author(s): Iwata H, Lindefelt U, Oberg S, Briddon PR

Editor(s): Yoshida, S., Nishino, S., Harima, H., Kimoto, T.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: International Conference on Silicon Carbide and Related Materials

Year of Conference: 2002

Pages: 533-536

ISSN: 0255-5476

Publisher: Trans Tech Publications Ltd.

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.389-393.533

DOI: 10.4028/www.scientific.net/MSF.389-393.533

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 9780878498949


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