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Structure and electronic properties of nitrogen defects in silicon

Lookup NU author(s): Dr Jon Goss, Professor Patrick Briddon

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Abstract

Nitrogen-vacancy defects in Si axe of interest due to their ability to suppress the formation of large vacancy cluster during growth but there axe problems in their characterisation. We use local density functional theory to determine the local vibrational modes, electrical levels and stability of a number of nitrogen defects. A prominent nitrogen local vibrational mode at 663 cm(-1) is attributed to a nitrogen-vacancy centre and tentative assignments of the ABC photoluminescence line and the trigonal SL6 EPR centre axe made.


Publication metadata

Author(s): Jones R, Hahn I, Goss JP, Briddon PR, Oberg S

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Gettering and Defect Engineering in Semiconductor Technology (Gadest) Proceedings of the 10th International Autumn Meeting

Year of Conference: 2004

Pages: 93-98

ISSN: 1012-0394

Publisher: Scitec Publications Ltd.

Library holdings: Search Newcastle University Library for this item

Series Title: Solid State Phenomena

ISBN: 9783908450825


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