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Combined experimental and theoretical study of EEL spectroscopy of dislocations in wide band gap semiconductors

Lookup NU author(s): Professor Patrick Briddon

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Abstract

Electron energy loss spectroscopy (EELS) is a technique with the ability to probe the electrical activity of extended defects in semiconductors. In a cold field emission gun scanning transmission electron microscope (FEG STEM) under carefully chosen experimental conditions it is possible to detect states due to extended defects in wide band gap materials and these can be compared directly with density functional theory (DFT) calculations of the energy loss. We show how the spectra acquired from dislocations in GaN and diamond are related to the results of the first principle calculations.


Publication metadata

Author(s): Gutierrez-Sosa A, Bangert U, Fall CJ, Jones R, T Blumenau A, Briddon PR, Frauenheim T

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Microscopy of Semiconducting Materials: Conference on Microscopy of Semiconducting Materials

Year of Conference: 2003

Pages: 33-36

ISSN: 0951-3248

Publisher: Institute of Physics Publishing

Library holdings: Search Newcastle University Library for this item

Series Title: Institute of Physics Conference Series

ISBN: 9780750309790


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