Lookup NU author(s): Dr Jon Goss,
Professor Patrick Briddon
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
Mn doped GaAs is a potentially important material for the construction of dilute-ferromagnetic semiconducting devices. Due to the Mn ions representing both the magnetic ion and acceptor, the addition of hydrogen to selectively passivate Mn ions while retaining the magnetic properties has been suggested. However, the location of the H atom in the defect remains to be determined unambiguously. We present the results of density-functional calculations regarding the structure, vibrational and dilatation effects of X-Ga and X-Ga-H complexes for X=Mn, Be, Mg, and Zn. In all cases, H passivates the acceptor and energetically favors the bond-centered site. Passivated Mn-Ga is found to have a high-spin configuration of S=5/2.
Author(s): Goss JP, Briddon PR
Publication type: Article
Publication status: Published
Journal: Physical Review B
ISSN (print): 1098-0121
ISSN (electronic): 1550-235X
Publisher: American Physical Society
Altmetrics provided by Altmetric