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A novel sensor for the direct measurement of process induced residual stress in interconnects

Lookup NU author(s): Dr Alton Horsfall, Sorin Soare, Professor Nick Wright, Professor Anthony O'Neill, Professor Steve Bull

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Abstract

Residual stress in multilevel interconnects is a potential road block for the ITRS. Direct measurement of stress in interconnect tracks has been demonstrated for the first time using a rotating sensor fabricated in metallisation layers. The rotation is observable with a reflected light microscope and is compared with computer simulations using ANSYS. The structure is suitable for use in a production environment and is scalable to deep submicron features for future technology nodes. (8 References).


Publication metadata

Author(s): Horsfall AB, dos Santos JMM, Soare SM, Wright NG, O'Neill AG, Bull SJ, Walton AJ, Gundlach AM, Stevenson JTM

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 33rd European Solid-State Device Research

Year of Conference: 2003

Pages: 115-118

Publisher: IEEE

URL: http://dx.doi.org/10.1109/ESSDERC.2003.1256824

DOI: 10.1109/ESSDERC.2003.1256824

Notes: Franca J Freitas P Piscataway, NJ, USA. ESSDERC 2003. Proceedings of the 33rd European Solid-State Device Research - ESSDERC '03. Estoril, Portugal. IEEE. EDS. Infineon Technol. ATMEL. Tower Semiconductor Ltd. 16-18 Sept. 2003.

Library holdings: Search Newcastle University Library for this item

ISBN: 0780379994


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