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The divacancy in silicon and diamond

Lookup NU author(s): Dr Jon Goss, Professor Patrick Briddon

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Abstract

First-principles studies of the divacancy (V-2) in both silicon and diamond are reported. We demonstrate that the contrasting experimental spin-density localisation of both systems can be explained through the one-electron pictures arising from opposing distortions.


Publication metadata

Author(s): Briddon PR; Goss JP; Coomer BJ; Resende A; Jones R; Oberg S

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 20th International Conference on Defects in Semiconductors (ICDS-20)

Year of Conference: 1999

Pages: 520-523

ISSN: 0921-4526

Publisher: Elsevier

URL: http://dx.doi.org/10.1016/S0921-4526(99)00543-8

DOI: 10.1016/S0921-4526(99)00543-8

Library holdings: Search Newcastle University Library for this item

Series Title: Physica B: Condensed Matter

ISBN:


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