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Lookup NU author(s): Professor Jon Goss, Professor Patrick Briddon
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First-principles studies of the divacancy (V-2) in both silicon and diamond are reported. We demonstrate that the contrasting experimental spin-density localisation of both systems can be explained through the one-electron pictures arising from opposing distortions.
Author(s): Briddon PR; Goss JP; Coomer BJ; Resende A; Jones R; Oberg S
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 20th International Conference on Defects in Semiconductors (ICDS-20)
Year of Conference: 1999
Pages: 520-523
ISSN: 0921-4526
Publisher: Elsevier
URL: http://dx.doi.org/10.1016/S0921-4526(99)00543-8
DOI: 10.1016/S0921-4526(99)00543-8
Library holdings: Search Newcastle University Library for this item
Series Title: Physica B: Condensed Matter
ISBN:
