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Lookup NU author(s): Professor Patrick Briddon
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Two phosphorus centers in SiC, an isolated P atom substituting for Si (P-Si) and a Si-site P-atom adjacent to a carbon vacancy (P-Si + V-C) are investigated by first principle calculations. It is shown that P-Si + V-C produces a singly occupied donor level which lies deeper than that of P-Si but above the double donor level of Ve. The calculated spin distribution indicates that the P-related paramagnetic resonance signals, P-1,P-2 and P-V, originate from this complex.
Author(s): Gali A, Deak P, Briddon PR, Devaty RP, Choyke WJ
Publication type: Article
Publication status: Published
Journal: Physical Review B
ISSN (print): 1098-0121
ISSN (electronic): 1550-235X
Publisher: American Physical Society
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