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Carbon-tin defects in silicon

Lookup NU author(s): Professor Patrick Briddon

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Abstract

Infrared absorption experiments and ab initio computer simulations are used to study tin-carbon centers in silicon. Electron irradiation of C and Sn doped Si leads to prominent absorption lines at 873.5 and 1025 cm(-1). These are assigned to a carbon interstitial trapped by a substitutional Sn atom. The calculated modes are in good agreement with those observed. The calculations also suggest that a close-by pair of substitutional C and Sn will be a stable but electrically inert defect. This defect may account for the experimentally observed drop in the concentration of the C-s-C-i defect after a room temperature annealing. Finally, we suggest Sn-C codoping of Si for manufacturing of radiation hard silicon.


Publication metadata

Author(s): Lavrov EV, Fanciulli M, Kaukonen M, Jones R, Briddon PR

Publication type: Article

Publication status: Published

Journal: PHYSICAL REVIEW B

Year: 2001

Volume: 6412

Issue: 12

Pages: 125212(1-5)

ISSN (print): 0163-1829

ISSN (electronic):

Publisher: The American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevB.64.125212

DOI: 10.1103/PhysRevB.64.125212


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