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Hydrogen-related photoluminescent centers in SiC

Lookup NU author(s): Professor Patrick Briddon

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Abstract

Local density functional calculations are used to investigate models of the center responsible for a prominent set of luminescent lines with zero-phonon lines around 3.15 eV in hydrogen rich 4H-SiC and previously attributed to V-Si-H. We find that the electronic structure of this defect and the character of its vibrational modes are inconsistent with this assignment. In contrast, a H-2(*) center, bound to a carbon anti-site, is more stable than the isolated molecule and possesses a donor level close to that observed for the H-lines. Moreover, its vibrational modes are in good agreement with experiment. A possible mechanism for the radiation enhanced quenching of the defect is discussed.


Publication metadata

Author(s): Prezzi D, Eberlein TAG, Jones R, Hourahine B, Briddon PR, Oberg S

Publication type: Article

Publication status: Published

Journal: Physical Review B

Year: 2004

Volume: 70

Issue: 20

ISSN (print): 1098-0121

ISSN (electronic): 1550-235X

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevB.70.205207

DOI: 10.1103/PhysRevB.70.205207

Notes: Article no. 205207 5 pages


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