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Aluminium implantation induced linear surface faults in 4H-SiC

Lookup NU author(s): Professor Nick Wright, Dr Konstantin Vasilevskiy, Irina Nikitina, Dr Alton Horsfall, Dr Christopher Johnson, Praneet Bhatnagar, Peter Tappin

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Abstract

New results are presented of a surface trench defect observed during anneal of room temperature Al implants. The size of the surface defect is proportional to anneal temperature and occurs predominantly in the implanted zone. Signs of lattice strain are observed outside the implanted zone as well.


Publication metadata

Author(s): Wright NG, Vassilevski KV, Nikitina I, Horsfall AB, Johnson CM, Bhatnagar P, Tappin P

Editor(s): Nipoti, R., Poggi, A., Scorzoni, A.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Silicon Carbide and Related Materials: 5th European Conference on Silicon Carbide and Related Materials

Year of Conference: 2005

Pages: 613-616

ISSN: 0255-5476 (print) 1422-6375 (online)

Publisher: Trans Tech Publications Ltd.

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 9780878499632


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