Publications by Professor Nick Cowern - ePrints

Browsing publications by Professor Nick Cowern.

Newcastle Authors	Title	Year
Oras Al-Ani Professor Jon Goss Professor Nick Cowern Professor Patrick Briddon Meaad Al-Hadidi et al.	A density functional study of iron segregation at ISFs and Sigma-5-(001) GBs in mc-Si	2016
Oras Al-Ani Dr Ahmed Sabaawi Professor Jon Goss Professor Nick Cowern Professor Patrick Briddon et al.	Investigation into efficiency-limiting defects in mc-Si solar cells	2016
Professor Nick Cowern Dr Sergei Simdyankin Professor Jon Goss Dr Chihak Ahn Dr Nick Bennett et al.	Comment on "Diffusion of n-type dopants in germanium" [Appl. Phys. Rev. 1, 011301 (2014)]	2015
Dr Sergei Simdyankin Professor Nick Cowern	HELICS cell: Laser-cut grooves to create a high-efficiency, low-cost solar cell	2014
Professor Nick Cowern Dr Chihak Ahn	Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si	2014
Professor Nick Cowern	Donor deactivation at high doping limit: Donor pair and impurity band model	2013
Dr Chihak Ahn Professor Nick Cowern	Enhancement of gettering in epitaxial thin-film silicon solar cells by tuning the properties of porous silicon	2013
Professor Nick Cowern Dr Sergei Simdyankin Dr Chihak Ahn Dr Nick Bennett Professor Jon Goss et al.	Extended point defects in crystalline materials: Ge and Si	2013
Dr Nick Bennett Professor Nick Cowern	Doping characterization for germanium-based microelectronics and photovoltaics using the differential Hall technique	2012
Hariharsudan Sivaramakrishnan Dr Chihak Ahn Professor Nick Cowern	Gettering of transition metals by porous silicon in epitaxial silicon solar cells	2012
Professor Nick Cowern	Silicon-based photovoltaic solar cells	2012
Dr Chihak Ahn Professor Nick Cowern	Anthropogenic Climate Change in the Zero-Carbon Era	2011
Professor Nick Cowern Dr Chihak Ahn	TCAD in the semiconductor industry and its advantages for solar cell manufacturing	2011
Dr Chihak Ahn Laura Brown Professor Nick Cowern	Integrated process and device 'TCAD' for enhancement of c-Si solar cel efficiency	2010
Dr Chihak Ahn Laura Brown Professor Nick Cowern	Process and device modelling for enhancement of silicon solar cell efficiency	2010
Dr Nick Bennett Professor Nick Cowern	Review of electrical characterisation of ultra-shallow junctions with micro four-point probes	2010
Dr Nick Bennett Dr Chihak Ahn Professor Nick Cowern	Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium Layers	2010
Professor Nick Cowern Dr Nick Bennett Dr Chihak Ahn Dr Joo Chul Yoon	Transfer of Physically-Based Models from Process to Device Simulations: Application to Advanced Strained Si/SiGe MOSFETs	2010
Professor Nick Cowern	B profile alteration by annealing in reactive ambients	2009
Dr Nick Bennett Professor Nick Cowern	Experiments and models for electron mobility as a function of carrier concentration in heavily doped silicon and strained silicon	2009
Dr Nick Bennett Professor Nick Cowern	Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon	2009
Professor Nick Cowern Dr Nick Bennett Dr Chihak Ahn Dr Joo Chul Yoon	Overlayer stress effects on defect formation in Si and Ge	2009
Dr Sarah Olsen Professor Nick Cowern Professor Anthony O'Neill	Performance Enhancements in Scaled Strained-SiGe pMOSFETs With HfSiOx/TiSiN Gate Stacks	2009
Dr Nick Bennett Professor Nick Cowern	Photoacoustic spectroscopy at the nanoscale for ultra-shallow implanted silicon	2009
Dr Nick Bennett Professor Nick Cowern	Raman metrology for advanced CMOS devices - advantages and challenges	2009
Dr Nick Bennett Professor Nick Cowern	Review of electrical characterisation of ultra-shallow junctions with micro four-point probe	2009
Dr Chihak Ahn Dr Nick Bennett Professor Nick Cowern	Stress effects on impurity solubility in crystalline materials: A general model and density-functional calculations for dopants in silicon	2009
Professor Nick Cowern Dr Chihak Ahn	Thermal emissions and climate change: Cooler options for future energy technology	2009
Dr Nick Bennett Dr Chihak Ahn Professor Nick Cowern	Transient activation model for antimony in relaxed and strained silicon	2009
Dr Nick Bennett Professor Nick Cowern	Antimony for n -type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?	2008
Dr Nick Bennett Professor Nick Cowern	Constraints on micro-Raman strain metrology for highly doped strained Si materials	2008
Dr Nick Bennett Professor Nick Cowern	Differential Hall characterisation of ultrashallow doping in advanced Si-based materials	2008
Dr Nick Bennett Professor Nick Cowern	Doping of Sub-50nm SOI Layers	2008
Dr Nick Bennett Professor Nick Cowern	Enhanced n-type dopant solubility in tensile-strained Si	2008
Dr Nick Bennett Professor Nick Cowern	Impact of multiple sub-melt laser scans on the activation and diffusion of shallow boron junctions	2008
Dr Nick Bennett Professor Nick Cowern	On the analysis of the activation mechanisms of sub-melt laser anneals	2008
Dr Nick Bennett Professor Nick Cowern	On the analysis of the activation mechanisms of sub-melt laser anneals	2008
Dr Nick Bennett Professor Nick Cowern	Raman scattering studies of ultrashallow Sb implants in strained Si	2008
Professor Nick Cowern	Source-drain engineering for channel-limited PMOS device performance: Advances in understanding of amorphization-based implant techniques	2008
Dr Nick Bennett Professor Nick Cowern	Structural and electrical characterisation of ion-implanted strained silicon	2008
Dr Nick Bennett Professor Nick Cowern	Structural and electrical characterisation of ion-implanted strained silicon	2008
Professor Nick Cowern	Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing	2008
Professor Nick Cowern Dr Nick Bennett	Vacancy engineering - An ultra-low thermal budget method for high-concentration 'diffusionless' implantation doping	2008
Dr Nick Bennett Professor Nick Cowern Shona Paul	Vacancy engineering for highly activated ‘diffusionless’ boron doping in bulk silicon	2008
Dr Nick Bennett Professor Nick Cowern	Vacancy Engineering for Highly Activated 'Diffusionless' Boron Doping in Bulk Silicon	2008
Dr Nick Bennett Professor Nick Cowern	Antimony for NMOS ultrashallow junctions in strained Si: a superior dopant to arsenic	2007
Professor Nick Cowern	Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink	2007
Professor Nick Cowern	Diffusion in a single crystal within a stressed environment	2007
Professor Nick Cowern	Elastic interaction energy between a silicon interstitial and a carbon substitutional in a silicon crystal	2007
Dr Nick Bennett Professor Nick Cowern	Enhanced n-type dopant solubility in tensile strained Si	2007
Professor Nick Cowern	Influence of F co-implantation on end-of-range defect formation in B+ implanted, ultrashallow junctions	2007
Professor Nick Cowern	Intermittent diffusion and its influence on dopant profiles in semiconductors	2007
Professor Nick Cowern	Ion pairing effects on substitutional impurity diffusion in silicon	2007
Dr Nick Bennett Professor Nick Cowern	Micro-Raman Study of Anomalous Dopant-Induced Behaviour in Ultra-Shallow As and Sb Doped Strained Si	2007
Professor Nick Cowern	Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator	2007
Professor Nick Cowern	Deactivation of ultra shallow B and BF2 profiles after non-melt laser annealing	2006
Professor Nick Cowern	Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans	2006
Professor Nick Cowern	Defect evolution and dopant activation anomalies in ion implanted silicon	2006
Dr Biao Yang Professor Nick Cowern	Design and optimization of nanoCMOS devices using predictive atomistic physics-based process modeling	2006
Professor Nick Cowern Dr Suresh Uppal	Diffusion and activation of dopants in silicon and advanced silicon-based materials	2006
Professor Nick Cowern	Diffusion and activation of ultrashallow B implants in silicon-on-insulator: end-of-range defect dissolution and the buried Si/SiO2 interface	2006
Professor Nick Cowern	Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon	2006
Professor Nick Cowern	Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator	2006
Professor Nick Cowern	Effect of buried Si/SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junctions	2006
Professor Nick Cowern	Effect of fluorine on the activation and diffusion behavior of boron implanted preamorphized silicon	2006
Dr Nick Bennett Dr Gabriela Dilliway Professor Nick Cowern	Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon	2006
Professor Nick Cowern	Fluorine-vacancy complexes in ultrashallow B-implanted silicon	2006
Dr Nick Bennett Professor Nick Cowern	Highly conductive Sb-doped layers in strained silicon	2006
Professor Nick Cowern	Junction stability of B doped layers in SOI formed with optimized vacancy engineering implants	2006
Professor Nick Cowern	Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-On-Insulator	2006
Dr Nick Bennett Professor Nick Cowern	Strain-Enhanced Activation of Sb Ultrashallow Junctions	2006
Professor Nick Cowern	Suppression of phosphorus diffusion by carbon co-doping	2006
Dr Nick Bennett Professor Nick Cowern	Ultra-shallow junctions in silicon via low thermal budget processing	2006
Professor Nick Cowern	Vacancy engineering for ultra-shallow junction formation	2006
Professor Nick Cowern	Vacancy-engineering implants for high boron activation in silicon-on-insulator material	2006
Professor Nick Cowern	A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon	2005
Professor Nick Cowern	Boron diffusion in strained and strain-relaxed SiGe	2005
Professor Nick Cowern	Combined master and Fokker-Planck equations for the modeling of the kinetics of extended defects in Si	2005
Dr Nick Bennett Professor Nick Cowern	Differential Hall profiling of ultra-shallow junctions in Si and SOI	2005
Professor Nick Cowern	Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI	2005
Professor Nick Cowern	Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth	2005
Professor Nick Cowern	Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth	2005
Dr Nick Bennett Professor Nick Cowern	Low Temperature B Activation in SOI Using Optimised Vacancy Engineering Implants	2005
Professor Nick Cowern	Mechanisms of B deactivation control by F co-implantation	2005
Dr Shibin Liu Professor Nick Cowern	Modeling Dopant Diffusion in Strained and Strain-Relaxed Epi-SiGe	2005
Professor Nick Cowern	Raman study of the strain and H2 preconditioning effect on self-assembled Ge island on Si (001)	2005
Professor Nick Cowern	Suppression of boron interstitial clusters in SOI using vacancy engineering	2005
Dr Gabriela Dilliway Professor Nick Cowern	Transient enhanced diffusion and deactivation of ion-implanted As in strained Si	2005
Professor Nick Cowern	Transient enhanced diffusion of B at low temperatures under extrinsic conditions	2005
Professor Nick Cowern	Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJ	2005
Professor Nick Cowern	Understanding, Modeling and Optimizing Vacancy Engineering for Stable Highly Boron-Doped Ultrashallow Junctions	2005
Professor Nick Cowern	Advanced front-end processes for the 45 nm CMOS technology node	2004
Professor Nick Cowern	Boron diffusion in strained and strain-relaxed SiGe	2004
Professor Nick Cowern	Current understanding and modeling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions	2004
Professor Nick Cowern	Depth dependence of defect evolution and TED during annealing	2004
Dr Suresh Uppal Professor Nick Cowern	Diffusion of boron in germanium at 800–900°C	2004
Dr Suresh Uppal Professor Nick Cowern	Diffusion of ion-implanted boron and silicon in germanium	2004
Dr Suresh Uppal Professor Nick Cowern	Diffusion of ion-implanted Boron and Silicon in Germanium	2004
Professor Nick Cowern	Doping and mobility profiles in defect-engineered ultra-shallow junctions: Bulk and SOI	2004
Professor Nick Cowern	Effect of oxygen on the diffusion of nitrogen implanted in silicon	2004
Professor Nick Cowern	Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: interstitial transport and F co-implant control	2004
Professor Nick Cowern	Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions	2004
Dr Gabriela Dilliway Professor Nick Cowern Xiao Lu	Influence of H2 preconditioning on the nucleation and growth of self-assembled germanium islands on silicon (001)	2004
Professor Nick Cowern	Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing	2004
Professor Nick Cowern	Modelling of the chemical-pump effect and C clustering	2004
Professor Nick Cowern	On the modeling of transient diffusion and activation of boron during post-implantation annealing	2004
Professor Nick Cowern	Optimization of fluorine co-implantation for PMOS source and drain extension formation for 65nm technology node	2004
Professor Nick Cowern	The role of preamorphization and activation for ultra shallow junction formation on strained Si layers grown on SiGe buffer	2004
Professor Nick Cowern	The role of preamorphization and activation for ultra shallow junction formation on strained Si layers grown on SiGe buffer	2004
Professor Nick Cowern	Boron uphill diffusion during ultrashallow junction formation	2003
Dr Suresh Uppal Professor Nick Cowern	Diffusion of boron in germanium and Si1-xGex (x>50%) alloys	2003
Professor Nick Cowern	Physics-based diffusion simulations for preamorphized ultrashallow junctions	2003
Professor Nick Cowern	Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects	2003
Dr Gabriela Dilliway Professor Nick Cowern	Self-assembled germanium islands grown on (001) silicon substrates by low-pressure chemical vapor deposition	2003
Dr Gabriela Dilliway Professor Nick Cowern	Structural and compositional evolution of self-assembled germanium islands on silicon (001) during high growth rate LPCVD	2003
Professor Nick Cowern	Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon	2003
Professor Nick Cowern	Diffusion Suppression in Silicon by Substitutional C Doping	2002
Professor Nick Cowern	Issues on boron electrical activation in silicon: experiments on boron clusters and shallow junctions formation	2002
Professor Nick Cowern	A reduced approach for modelling the influence of nanoclusters and {113} defects on transient enhanced diffusion	2001
Dr Suresh Uppal Professor Nick Cowern	Diffusion of ion-implanted Boron in Germanium	2001
Professor Nick Cowern	Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon	2001
Professor Nick Cowern	Furnace and RTA injection of point defects into CVD-grown B doped Si and SiGe	2001
Professor Nick Cowern	Investigation of a novel rapid thermal processing concept using an electro-optically controlled radiation cavity	2001
Dr Suresh Uppal Professor Nick Cowern	Ion-implantation and diffusion behaviour of boron in germanium	2001
Professor Nick Cowern	Ultra shallow boron base profile with carbon implantation	2001
Professor Nick Cowern	Enhanced diffusion in silicon processing	2000
Professor Nick Cowern	Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon	2000
Professor Nick Cowern	Ultrashallow junction formation and gate activation in deep-submicron CMOS	2000
Professor Nick Cowern	Boride-enhanced diffusion in silicon: Bulk and surface layers	1999
Professor Nick Cowern	Cluster ripening and transient enhanced diffusion in silicon	1999
Professor Nick Cowern	Energetics of self-interstitial clusters in Si	1999
Professor Nick Cowern	Fundamental diffusion issues for deep submicron device scaling	1999