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Browsing publications by Dr Yuk Tsang.

Newcastle AuthorsTitleYearFull text
Dr Sarah Olsen
Dr Piotr Dobrosz
Rouzet Agaiby
Dr Yuk Tsang
Layi Alatise
et al.
Nanoscale strain characterisation for ultimate CMOS and beyond2008
Dr Sarah Olsen
Dr Piotr Dobrosz
Rouzet Agaiby
Dr Yuk Tsang
Layi Alatise
et al.
Nanoscale strain characterisation for ultimate CMOS and beyond2008
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Steve Bull
Dr Yuk Tsang
Rouzet Agaiby
et al.
Nanoscale strain characterisation in patterned SSOI structures2008
Professor Anthony O'Neill
Dr Yuk Tsang
Dr Barry Gallacher
Dr Sarah Olsen
Piezomobility description of strain-induced mobility2008
Dr Yuk Tsang
Professor Anthony O'Neill
Dr Barry Gallacher
Dr Sarah Olsen
Using piezoresistance model with C-R conversion for modeling of strain-induced mobility2008
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Yuk Tsang
Dr Piotr Dobrosz
Evolution of strain engineering for Si technology2007
Dr Yuk Tsang
Dr Sanatan Chattopadhyay
Dr Suresh Uppal
Dr Enrique Escobedo-Cousin
Deepak Ramakrishnan
et al.
Modeling of the threshold voltage in strained Si/Si1-x Gex/S1-yGey(x ≥ y) CMOS architectures2007
Dr Yuk Tsang
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Goutan Dalapati
Rouzet Agaiby
et al.
Analytical model for threshold voltage of p-MOSFET in strained-Si/SiGe dual channel architecture2006
Dr Sanatan Chattopadhyay
John Varzgar
Dr Johan Seger
Dr Yuk Tsang
Dr Kelvin Kwa
et al.
Capacitance-voltage (C-V) technique for the characterisation of stained Si/Si1-xGex hetero-structure MOS devices2006
Dr Sanatan Chattopadhyay
John Varzgar
Dr Johan Seger
Dr Yuk Tsang
Dr Kelvin Kwa
et al.
Capacitance-voltage (C-V) technique for the characterisation of strained Si/Si1-xGex hetero-structure MOS devices2006
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Yuk Tsang
Dr Piotr Dobrosz
Evolution of strain engineering for Si technology2006
Goutan Dalapati
Dr Kelvin Kwa
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
Impact of strained Si thickness and Ge our diffusion on strained-Si/SiO2 interface quality for surface channel strained Si n-MOSFET devices2006
Goutan Dalapati
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Dr Sarah Olsen
Dr Yuk Tsang
et al.
Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs2006
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Yuk Tsang
et al.
Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures2006
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Yuk Tsang
et al.
Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures2006
Goutan Dalapati
Dr Kelvin Kwa
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
Thermal oxidation of strained-Si: impact of strained-Si thickness and Ge on Si/SiO2 interface2006