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Browsing publications by Dr Piotr Dobrosz.

Newcastle AuthorsTitleYearFull text
Dr Piotr Dobrosz
Dr Sarah Olsen
Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs2010
Dr Piotr Dobrosz
Dr Sarah Olsen
Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs2010
Dr Piotr Dobrosz
Dr Sarah Olsen
The High-Mobility Bended n-Channel Silicon Nanowire Transistor2010
Dr Piotr Dobrosz
Dr Sarah Olsen
Investigation of oxidation-induced strain in a top-down Si nanowire platform2009
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Anthony O'Neill
Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs2009
Lisa Sanderson
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Steve Bull
Tip enhanced Raman spectroscopy for high resolution assessment of strained silicon devices2009
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Anthony O'Neill
Investigation of Strain Profile Optimization in gate-all-around suspended silicon nanowire FET2008
Rouzet Agaiby
Dr Sarah Olsen
Dr Piotr Dobrosz
Professor Steve Bull
Professor Anthony O'Neill
et al.
Nanometer Scale Strain Profiling Through Si-SiGe Heterolayers2008
Rouzet Agaiby
Dr Sarah Olsen
Dr Piotr Dobrosz
Professor Steve Bull
Professor Anthony O'Neill
et al.
Nanometer strain profiling through Si/SiGe quantum layers2008
Dr Sarah Olsen
Dr Piotr Dobrosz
Rouzet Agaiby
Dr Yuk Tsang
Layi Alatise
et al.
Nanoscale strain characterisation for ultimate CMOS and beyond2008
Dr Sarah Olsen
Dr Piotr Dobrosz
Rouzet Agaiby
Dr Yuk Tsang
Layi Alatise
et al.
Nanoscale strain characterisation for ultimate CMOS and beyond2008
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Steve Bull
Dr Yuk Tsang
Rouzet Agaiby
et al.
Nanoscale strain characterisation in patterned SSOI structures2008
Dr Sarah Olsen
John Varzgar
Dr Enrique Escobedo-Cousin
Rouzet Agaiby
Dr Piotr Dobrosz
et al.
Strain engineering for high mobility channels2008
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Anthony O'Neill
Bended gate-all-around nanowire MOSFET: A device with enhanced carrier mobility due to oxidation-induced tensile stress2007
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Yuk Tsang
Dr Piotr Dobrosz
Evolution of strain engineering for Si technology2007
Dr Enrique Escobedo-Cousin
Dr Sarah Olsen
Professor Anthony O'Neill
Layi Alatise
Rouzet Agaiby
et al.
Strained Si/strained SiGe/relaxed SiGe structures: identifying roughness due to compressed SiGe and its impact on high mobility MOSFETs2007
Dr Enrique Escobedo-Cousin
Dr Sarah Olsen
Dr Piotr Dobrosz
Professor Steve Bull
Professor Anthony O'Neill
et al.
Thermal stability of supercritical thickness-strained Si layers on thin strain-relaxed buffers2007
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
John Varzgar
Rimoon Agaiby
Dr Johan Seger
et al.
Control of self-heating in thin virtual substrate strained Si MOSFETs2006
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Yuk Tsang
Dr Piotr Dobrosz
Evolution of strain engineering for Si technology2006
Goutan Dalapati
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Dr Sarah Olsen
Dr Yuk Tsang
et al.
Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs2006
Dr Sarah Olsen
Dr Piotr Dobrosz
Dr Enrique Escobedo-Cousin
Rouzet Agaiby
Rimoon Agaiby
et al.
Strain characterisation in advanced Si devices2006
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
John Varzgar
Rimoon Agaiby
et al.
Strained Si MOSFETs using thin virtual substrates2006
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
John Varzgar
Rimoon Agaiby
et al.
Strained Si technology2006
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
John Varzgar
Rouzet Agaiby
et al.
Strained silicon technology2006
Dr Sarah Olsen
Dr Piotr Dobrosz
Professor Steve Bull
Professor Anthony O'Neill
The relationship between strain generation and relaxation, composition and electrical performance in strained Si/SiGe MOS technology2006
Dr Sarah Olsen
Professor Steve Bull
Dr Piotr Dobrosz
Dr Enrique Escobedo-Cousin
Rouzet Agaiby
et al.
Thermal stability of thin virtual substrates for high performance devices2006
Professor Steve Bull
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Anthony O'Neill
Assessment of strained silicon/SiGe with different architectures by Raman spectroscopy2005
Dr Sarah Olsen
Dr Piotr Dobrosz
Dr Enrique Escobedo-Cousin
Professor Steve Bull
Professor Anthony O'Neill
et al.
Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs2005
Professor Steve Bull
Dr Piotr Dobrosz
Dr Sarah Olsen
Professor Anthony O'Neill
On the relationship between electrical performance and Raman spectroscopic results for strained Si/SiGe devices2005
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Piotr Dobrosz
Professor Steve Bull
Luke Driscoll
et al.
Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors2005
Dr Piotr Dobrosz
Professor Steve Bull
Dr Sarah Olsen
Professor Anthony O'Neill
The use of Raman spectroscopy to identify strain and strain relaxation in strained Si/SiGe structures2005
Lynn Driscoll
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters2004
Luke Driscoll
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters2004
Luke Driscoll
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters2004
Dr Piotr Dobrosz
Professor Steve Bull
Dr Sarah Olsen
Professor Anthony O'Neill
Measurement of the residual macro and microstrain in strained Si/SiGe using Raman spectroscopy2004
Dr Piotr Dobrosz
Professor Steve Bull
Dr Sarah Olsen
Professor Anthony O'Neill
Measurement of the residual macro and microstrain in strained Si/SiGe using Raman spectroscopy2004
Dr Piotr Dobrosz
Professor Steve Bull
Dr Sarah Olsen
Professor Anthony O'Neill
Measurement of the residual macro and microstrain in strained Si/SiGe using Raman spectroscopy2004
Dr Piotr Dobrosz
Professor Steve Bull
Dr Sarah Olsen
Professor Anthony O'Neill
Measurement of the Residual Macro and Microstrain in Strained Si/SiGe using Raman Spectroscopy Z Metal2004
Dr Piotr Dobrosz
Professor Steve Bull
Dr Sarah Olsen
Professor Anthony O'Neill
Measurement of the residual strain in strained Si/SiGe using Raman spectroscopy2004
Dr Piotr Dobrosz
Professor Steve Bull
Dr Sarah Olsen
Professor Anthony O'Neill
Technique for measuring the residual strain in strained Si/SiGe MOSFET structures using Raman spectroscopy2004
Dr Piotr Dobrosz
Professor Steve Bull
Dr Sarah Olsen
Professor Anthony O'Neill
Technique for measuring the residual strain in strained Si/SiGe MOSFET structures using Raman spectroscopy2004