ePrints

Interstitial H-2 in germanium by Raman scattering and ab initio calculations

Lookup NU author(s): Richard Jones, Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

Single-crystalline germanium wafers exposed to hydrogen and/or deuterium plasma are studied by means of Raman scattering. The Raman frequencies are compared to results of ab initio calculations. For samples treated with pure hydrogen, Raman measurements performed at a temperature of 80 K reveal two sharp lines at 3826 and 3834 cm(-1) with an intensity ratio of 3:1, which are assigned to ortho- and para-H-2 trapped at the interstitial T site of the lattice.

Publication metadata

Author(s): Hiller M, Lavrov EV, Weber J, Hourahine B, Jones R, Briddon PR

Publication type: Article

Publication status: Published

Journal: Physical Review B

Year: 2005

Volume: 72

Issue: 15

ISSN (print): 1098-0121

ISSN (electronic): 1550-235X

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevB.72.153201

DOI: 10.1103/PhysRevB.72.153201

Altmetrics

Share