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Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon

Lookup NU author(s): Dr Nick Bennett, Professor Nick Cowern

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Publication metadata

Author(s): Bennett NS, Cowern NEB, Sealy BJ

Publication type: Article

Journal: Applied Physics Letters

Year: 2009

Volume: 94

Issue: 25

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.3159821

DOI: 10.1063/1.3159821


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