Toggle Main Menu Toggle Search

ePrints

1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack

Lookup NU author(s): Liang Yan, Dr Sarah Olsen, Professor Anthony O'Neill

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Publication metadata

Author(s): Yan L, Simoen E, Olsen SH, Akheyar A, Claeys C, O'Neill AG

Publication type: Article

Journal: Solid-State Electronics

Year: 2009

Volume: 53

Issue: 11

Pages: 1177-1182

ISSN (print): 0038-1101

ISSN (electronic): 1879-2405

Publisher: Pergamon

URL: http://dx.doi.org/10.1016/j.sse.2009.07.007

DOI: 10.1016/j.sse.2009.07.007


Altmetrics

Altmetrics provided by Altmetric


Actions

    Link to this publication


Share