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Improved Analog Performance in Strained-Si MOSFETs Using the Thickness of the Silicon-Germanium Strain-Relaxed Buffer as a Design Parameter

Lookup NU author(s): Layi Alatise, Dr Kelvin Kwa, Dr Sarah Olsen, Professor Anthony O'Neill

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Author(s): Alatise OM, Kwa KSK, Olsen SH, O'Neill AG

Publication type: Article

Journal: IEEE Transactions on Electron Devices

Year: 2009

Volume: 56

Issue: 12

Pages: 3041-3048

ISSN (print): 0018-9383

ISSN (electronic): 1557-9646

Publisher: IEEE

URL: http://dx.doi.org/10.1109/TED.2009.2030721

DOI: 10.1109/TED.2009.2030721


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