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Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs

Lookup NU author(s): Dr Piotr Dobrosz, Dr Sarah Olsen

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Author(s): Najmzadeh M, De Michielis L, Bouvet D, Dobrosz P, Olsen S, Ionescu AM

Editor(s):

Publication type: Conference Proceedings (inc. Abstract)

Conference Name: Microelectronic Engineering: 35th International Conference on Micro and Nano Engineering

Year of Conference: 2010

Pages: 1561-1565

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Publisher: Elsevier

URL: http://dx.doi.org/10.1016/j.mee.2009.11.024

DOI: 10.1016/j.mee.2009.11.024

Library holdings: Search Newcastle University Library for this item

ISBN: 18735568


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