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Strained Si/SiGe MOS technology: Improving gate dielectric integrity

Lookup NU author(s): Dr Sarah Olsen, Liang Yan, Dr Enrique Escobedo-Cousin, Professor Anthony O'Neill

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Author(s): Olsen SH, Yan L, Agaiby R, Escobedo-Cousin E, O'Neill AG, Hellström PE, Ostling M, Lyutovich K, Kasper E, Claeys C, Parker EHC

Publication type: Article

Journal: Microelectronic Engineering

Year: 2009

Volume: 86

Issue: 3

Pages: 218-223

ISSN (print): 0167-9317

ISSN (electronic): 1873-5568

Publisher: Elsevier

URL: http://dx.doi.org/10.1016/j.mee.2008.08.001

DOI: 10.1016/j.mee.2008.08.001


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