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Improved self-gain in deep submicrometer strained silicon-germanium pMOSFETs with HfSiOx/TiSiN gate stacks

Lookup NU author(s): Layi Alatise, Dr Sarah Olsen, Professor Anthony O'Neill

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Publication metadata

Author(s): Alatise OM, Olsen SH, O'Neill AG, Majhi P

Publication type: Article

Journal: Microelectronic Engineering

Year: 2010

Volume: 87

Issue: 11

Pages: 2196-2199

Print publication date: 18/02/2010

ISSN (print): 0167-9317

ISSN (electronic): 1873-5568

Publisher: Elsevier BV

URL: http://dx.doi.org/10.1016/j.mee.2010.02.002

DOI: 10.1016/j.mee.2010.02.002


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