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Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs

Lookup NU author(s): Dr Piotr Dobrosz, Dr Sarah Olsen

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Publication metadata

Author(s): Najmzadeh M, De Michielis L, Bouvet D, Dobrosz P, Olsen S, Ionescu A

Publication type: Article

Journal: Microelectronic Engineering

Year: 2010

Volume: 87

Issue: 5-8

Pages: 1561-1565

ISSN (print): 0167-9317

ISSN (electronic): 1873-5568

Publisher: Elsevier BV

URL: http://dx.doi.org/10.1016/j.mee.2009.11.024

DOI: 10.1016/j.mee.2009.11.024


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