Lookup NU author(s): Professor Nick Cowern,
Dr Nick Bennett,
Dr Chihak Ahn,
Dr Joo Chul Yoon
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Integrated process and device simulations were used to predict sub-45nm Strained-Si/Si0.8Ge0.2 device performance. Physically-based process models, generalized from Si to strained-Si and SiGe, describe dopant implantation and diffusion, including amorphization, defect interactions and evolution, as well as dopant-defect interactions. The models are used within a unique simulation tool to reproduce the electrical characteristics of Si/SiGe devices.
Author(s): Bazizi EM, Fazzini PF, Cristiano F, Pakfar A, Tavernier C, Payet F, Skotnicki T, Zechner C, Zographos N, Matveev D, Cowern NEB, Bennett N, Ahn C, Yoon JC
Publication type: Conference Proceedings (inc. Abstract)
Conference Name: International Electron Device Meeting
Year of Conference: 2010
Notes: Online ISBN: 9781424474196
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